bipolar power transistors pnp silicon ? collector emitter sustaining voltage e v ceo(sus) = 30 vdc (min) @ i c = 10 madc ? high dc current gain e h fe = 125 (min) @ i c = 0.8 adc = 90 (min) @ i c = 3.0 adc ? low collector emitter saturation voltage e v ce(sat) = 0.275 vdc (max) @ i c = 1.2 adc = 0.55 vdc (max) @ i c = 3.0 adc ? sot223 surface mount packaging ????????????????????????????????? ????????????????????????????????? maximum ratings (t c = 25 c unless otherwise noted) ??????????????????????? ??????????????????????? rating ????? ????? symbol ???? ???? value ???? ???? unit ??????????????????????? ? ????????????????????? ? ??????????????????????? collectoremitter voltage ????? ? ??? ? ????? v ceo ???? ? ?? ? ???? 30 ???? ? ?? ? ???? vdc ??????????????????????? ??????????????????????? collectorbase voltage ????? ????? v cb ???? ???? 45 ???? ???? vdc ??????????????????????? ??????????????????????? emitterbase voltage ????? ????? v eb ???? ???? 6.0 ???? ???? vdc ??????????????????????? ??????????????????????? base current e continuous ????? ????? i b ???? ???? 1.0 ???? ???? adc ??????????????????????? ? ????????????????????? ? ??????????????????????? collector current e continuous collector current e peak ????? ? ??? ? ????? i c ???? ? ?? ? ???? 3.0 5.0 ???? ? ?? ? ???? adc ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? total power dissipation @ t c = 25 c derate above 25 c total p d @ t a = 25 c mounted on 1o sq. (645 sq. mm) collector pad on fr4 bd material to t a l p d @ t a = 25 c mounted on 0.012o sq. (7.6 sq. mm) collector pad on fr4 bd material ????? ? ??? ? ? ??? ? ????? p d ???? ? ?? ? ? ?? ? ???? 3.0 24 1.56 0.72 ???? ? ?? ? ? ?? ? ???? watts mw/ c watts ??????????????????????? ??????????????????????? operating and storage junction temperature range ????? ????? t j , t stg ???? ???? 55 to +150 ???? ???? c ????????????????????????????????? ? ??????????????????????????????? ? ????????????????????????????????? thermal characteristics ??????????????????????? ??????????????????????? characteristic ????? ????? symbol ???? ???? max ???? ???? unit ??????????????????????? ? ????????????????????? ? ? ????????????????????? ? ??????????????????????? thermal resistance junction to case junction to ambient on 1o sq. (645 sq. mm) collector pad on fr4 bd material junction to ambient on 0.012o sq. (7.6 sq. mm) collector pad on fr4 bd material ????? ? ??? ? ? ??? ? ????? r q jc r q ja r q ja ???? ? ?? ? ? ?? ? ???? 42 80 174 ???? ? ?? ? ? ?? ? ???? c/w ??????????????????????? ??????????????????????? maximum lead temperature for soldering purposes, 1/8o from case for 5 seconds ????? ????? t l ???? ???? 260 ???? ???? c preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 april, 2001 rev. 3 1 publication order number: mmjt9435/d mmjt9435 power bjt i c = 3.0 amperes bv ceo = 30 volts v ce(sat) = 0.275 volts case 318e04, style 1 on semiconductor preferred device top view pinout c ce b 4 123 schematic c 2,4 b 1 e 3
mmjt9435 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (i c = 10 madc, i b = 0 adc) ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 30 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? emitterbase voltage (i e = 50 adc, i c = 0 adc) ????? ? ??? ? ????? v ebo ???? ? ?? ? ???? 6.0 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = 25 vdc, r be = 200 ) (v ce = 25 vdc, r be = 200 , t j = 125 c) ????? ? ??? ? ????? i cer ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 20 200 ??? ? ? ? ??? m adc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current (v be = 5.0 vdc) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 0.8 adc, i b = 20 madc) (i c = 1.2 adc, i b = 20 madc) (i c = 3.0 adc, i b = 0.3 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? 0.155 e e ???? ? ?? ? ? ?? ? ???? 0.210 0.275 0.550 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 3.0 adc, i b = 0.3 adc) ????? ? ??? ? ????? v be(sat) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 1.25 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? baseemitter on voltage (i c = 1.2 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? v be(on) ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 1.10 ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? dc current gain (i c = 0.8 adc, v ce = 1.0 vdc) (i c = 1.2 adc, v ce = 1.0 vdc) (i c = 3.0 adc, v ce = 1.0 vdc) ????? ? ??? ? ? ??? ? ????? h fe ???? ? ?? ? ? ?? ? ???? 125 110 90 ??? ? ? ? ? ? ? ??? 220 e e ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0 adc, f = 1.0 mhz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? e ??? ? ? ? ??? 100 ???? ? ?? ? ???? 150 ??? ? ? ? ??? pf ??????????????????? ??????????????????? input capacitance (v eb = 8.0 vdc) ????? ????? c ib ???? ???? e ??? ??? 135 ???? ???? e ??? ??? pf ??????????????????? ? ????????????????? ? ??????????????????? currentgain e bandwidth product (2) (i c = 500 ma, v ce = 10 v, f test = 1.0 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? e ??? ? ? ? ??? 110 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width 300 m s, duty cycle 2%. (2) f t = |h fe | f test
mmjt9435 http://onsemi.com 3 figure 1. collector saturation region figure 2. collector saturation region figure 3. dc current gain 100 1000 1.0 i b , base current (ma) 1.0 0.50 0.25 i b , base current (ma) 100 1000 1.0 0 10 0.1 i c , collector current (a) 1000 100 10 v ce(sat) , collector-emitter voltage (v) h 0 10 10 0.05 0.25 1.0 , dc current gain fe figure 4. dc current gain figure 5. aono voltages 10 0.1 i c , collector current (a) 10 1.0 0.1 0.01 1.0 v, voltage (v) figure 6. aono voltages 0.75 0.10 0.15 0.20 v ce(sat) , collector-emitter voltage (v) 10 0.1 i c , collector current (a) 1000 100 10 h 1.0 , dc current gain fe 10 0.1 i c , collector current (a) 1.0 0.1 0.01 1.0 v, voltage (v) i c = 3.0 a 1.2 a 0.8 a 0.25 a 0.5 a i c = 0.25 a 1.2 a 0.8 a 0.5 a v ce = 1.0 v 150 c 25 c -55 c v ce = 4.0 v 150 c 25 c -55 c i c /i b = 10 v be(sat) v ce(sat) i c /i b = 50 v be(sat) v ce(sat)
mmjt9435 http://onsemi.com 4 figure 7. v be(on) voltage figure 8. output capacitance figure 9. currentgain bandwidth product 1.0 10 0.1 i c , collector current (a) 1.2 0.8 0.4 v r , reverse voltage (volts) 10 100 0.1 10 0.1 i c , collector current (a) 1000 10 v, voltage (v) capacitance (pf) f 0 1.0 10 1000 1.0 , current-gain bandwidth product t v ce , collector-emitter voltage (volts) 1.0 0.1 10 1.0 0.001 i 10 100 figure 10. active region safe operating area 100 0.01 0.1 , collector current (amps) c v ce = 4.0 v 150 c 25 c -55 c c ob v ce = 10 v f test = 1.0 mhz t a = 25 c bonding wire limit thermal limit (single pulse) secondary breakdown limit 0.5 ms 100 ms 5.0 ms 100 figure 11. power derating 150 25 t, temperature ( c) 4.0 3.0 2.0 1.0 0 p 50 , power dissipation (watts) d 75 100 125 t a t c there are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t j(pk) = 150 c; t c is variable depending on conditions. secondary breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 12. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
mmjt9435 http://onsemi.com 5 d = 0.5 single pulse 0.2 0.1 0.05 0.02 0.01 figure 12. thermal response 0.01 0.1 0.0001 t, time (seconds) 1.0 0.1 0.01 r(t), effective transient thermal 0.0001 0.001 0.001 10 100 1.0 resistance (normalized) 1000 r q ja (t) = r(t) q ja q ja = 174 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t a = p (pk) q ja (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
mmjt9435 http://onsemi.com 6 package dimensions case 318e04 issue k sot223 (to261) h s f a b d g l 4 123 0.08 (0003) c m k j dim a min max min max millimeters 0.249 0.263 6.30 6.70 inches b 0.130 0.145 3.30 3.70 c 0.060 0.068 1.50 1.75 d 0.024 0.035 0.60 0.89 f 0.115 0.126 2.90 3.20 g 0.087 0.094 2.20 2.40 h 0.0008 0.0040 0.020 0.100 j 0.009 0.014 0.24 0.35 k 0.060 0.078 1.50 2.00 l 0.033 0.041 0.85 1.05 m 0 10 0 10 s 0.264 0.287 6.70 7.30 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. base 2. collector 3. emitter 4. collector
mmjt9435 http://onsemi.com 7 notes
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